在ＩＩＩ－Ｖ族材料成长于介电窗中的期间，用以减少不均匀性和自掺杂的方法;METHOD FOR REDUCING GROWTH OF NON-UNIFORMITIES AND AUTODOPING DURING COLUMN III-V GROWTH INTO DIELECTRIC WINDOWS

摘要

一种经由形成在沈积于基板之经选择部分上方的介电层中的窗用于将III-V族材料沈积在该基板之该经选择部分上方的方法。该方法包括形成单晶层或多晶层在相邻于该窗之该介电层的场域上方；并藉由MOCVD将III-V族材料成长在单晶层或多晶层上方并经由该窗成长在该基板的该经选择部分上方。; and, growing, by MOCVD, a column III-V material over the single crystal layer or polycrystalline layer and through the window over the selected portion of the substrate.