| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which prevents defects caused by an end of a semiconductor layer provided in an island shape and achieves improved reliability.SOLUTION: A semiconductor device comprises: an island-like semiconductor layer provided on a substrate; an insulation layer provided on a surface and lateral faces of the island-like semiconductor layer; and a gate electrode provided on the island-like semiconductor layer via an insulation layer. At this time, in the insulation layer provided in contact with the island-like semiconductor layer, a dielectric constant of a region which contacts the lateral face of the island-like semiconductor layer is made smaller in comparison with the surface of the island-like semiconductor layer. |
