SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can reduce time to expose a silicon carbide material to high temperature when an insulation film is formed on a surface of the silicon carbide material thereby to prevent surface roughness of the silicon carbide material and progression of crystal defects.SOLUTION: A semiconductor device manufacturing method of forming an insulation film on a surface of a silicon carbide material comprises: a temperature rise process (t1-t2) of increasing temperature of the silicon carbide material to a predetermined temperature in an active gas atmosphere; a temperature hold process (t2-t3) of holding the silicon carbide material at the predetermined temperature; and a temperature drop process (t3-t4) of decreasing temperature of the silicon carbide material. At least one of the temperature hold process and the temperature drop process (t3-t4) is performed in a nitrogen-containing active gas atmosphere.