发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device 1 which enables easy manufacturing and achieves high reliability.SOLUTION: A semiconductor device 1 includes: a semiconductor chip 10 having a substrate part 11 in which a semiconductor circuit 12 is formed and a multilayer wiring circuit 13 including a conductor layer 20 connected with the semiconductor circuit 12 and an insulation layer 30 made of a low dielectric constant material having a dielectric constant lower than that of silicon, the semiconductor chip 10 where the insulation layer 30 is exposed on a side surface; and a protection layer 40 which covers at least a region of an outer peripheral surface of the semiconductor chip 10 where the insulation layer 30 is exposed, the protection layer 40 made of a material which is more excellent than the low dielectric constant material in moisture resistance.</p>
申请公布号 JP2015072943(A) 申请公布日期 2015.04.16
申请号 JP20130206592 申请日期 2013.10.01
申请人 OLYMPUS CORP 发明人 NAKAYAMA TAKASHI
分类号 H01L23/00;H01L21/316;H01L21/318;H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L23/00
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