SECTOR-BASED REGULATION OF PROGRAM VOLTAGES FOR NON-VOLATILE MEMORY (NVM) SYSTEMS

摘要

Methods and systems are disclosed for sector-based regulation of program voltages for non-volatile memory (NVM) systems. The disclosed embodiments regulate program voltages for NVM cells based upon feedback signals generated from sector return voltages that are associated with program voltage drivers that are driving program voltages to NVM cells within selected sectors an NVM array. As such, drops in program voltage levels due to IR (current-resistance) voltage losses in program voltage distribution lines are effectively addressed. This sector-based regulation of the program voltage effectively maintains the desired program voltage at the cells being programmed regardless of the sector being accessed for programming and the number of cells being programmed. Sector return voltages can also be used along with local program voltages to provide two-step feedback regulation for the voltage generation circuitry. Test mode configurations can also be provided using test input and/or output pads.

主权项

1. A non-volatile memory (NVM) system, comprising:
an array of NVM cells organized in a plurality of sectors; a plurality of program voltage drivers within each sector coupled to drive program nodes within the NVM cells, the program voltage drivers being configured to output a sector return voltage when active; voltage generation circuitry configured to output a program voltage to the plurality of program voltage drivers, the program voltage being dependent upon a feedback signal; and feedback circuitry coupled to receive the sector return voltage and to provide the feedback signal to the voltage generation circuitry.