发明名称 |
SPUTTERING TARGET AND METHOD FOR PRODUCING SAME |
摘要 |
<p>A sputtering target which contains a hexagonal layered compound that is mainly composed of indium oxide and zinc oxide and is represented by formula In2O3(ZnO)m (wherein m is an integer of 2-7), and which also contains elemental Sn and elemental Zr. The ratio of elemental Sn relative to all metal elements in this sputtering target is more than 2,000 ppm but 20,000 ppm or less.</p> |
申请公布号 |
WO2015052927(A1) |
申请公布日期 |
2015.04.16 |
申请号 |
WO2014JP05120 |
申请日期 |
2014.10.08 |
申请人 |
IDEMITSU KOSAN CO.,LTD. |
发明人 |
NISHIMURA, MAMI;OHYAMA, MASASHI |
分类号 |
C23C14/34;C04B35/00;C23C14/08;H01B5/14 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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