发明名称 SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
摘要 <p>A sputtering target which contains a hexagonal layered compound that is mainly composed of indium oxide and zinc oxide and is represented by formula In2O3(ZnO)m (wherein m is an integer of 2-7), and which also contains elemental Sn and elemental Zr. The ratio of elemental Sn relative to all metal elements in this sputtering target is more than 2,000 ppm but 20,000 ppm or less.</p>
申请公布号 WO2015052927(A1) 申请公布日期 2015.04.16
申请号 WO2014JP05120 申请日期 2014.10.08
申请人 IDEMITSU KOSAN CO.,LTD. 发明人 NISHIMURA, MAMI;OHYAMA, MASASHI
分类号 C23C14/34;C04B35/00;C23C14/08;H01B5/14 主分类号 C23C14/34
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