| 发明名称 |
RESIST MASK PROCESSING METHOD |
| 摘要 |
A method for processing a resist mask includes: (a) a step of preparing, in a processing chamber, a target object to be processed having a patterned resist mask provided thereon; and (b) a step of generating a plasma of the hydrogen-containing gas by supplying a hydrogen-containing gas and supplying a microwave into the processing chamber. The hydrogen-containing gas may be, e.g., H2 gas. |
| 申请公布号 |
US2015104957(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201314403794 |
申请日期 |
2013.06.17 |
| 申请人 |
TOKYO ELECTRIC LIMITED |
发明人 |
Takachi Michihisa;Shimizu Yusuke;Ozu Toshihisa |
| 分类号 |
H01L21/02;H01L21/306;H01L21/033 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a resist mask comprising:
preparing, in a processing chamber, a target object to be processed having a patterned resist mask provided thereon; and generating a plasma of a hydrogen-containing gas by supplying the hydrogen-containing gas and supplying a microwave into the processing chamber. |
| 地址 |
Tokyo JP |
