SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor light emitting device includes a substrate having first and second electrode patterns on at least one surface thereof, a light emitting structure on a surface of the substrate, a first electrode structure, a second electrode structure, an insulating layer, a first connection portion connecting the first electrode structure and the first electrode pattern, and a second connection portion connecting the second electrode structure extending outwardly from the light emitting structure and the second electrode pattern.

主权项

1. A method for fabricating a semiconductor light emitting device, the method comprising:
preparing a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially applied to a substrate for growth of semiconductor; forming first and second electrode structures electrically connected to the first and second conductivity-type semiconductor layers, respectively; preparing a substrate having first and second electrode patterns formed on at least one surface thereof; attaching the light emitting structure and the substrate by using an insulator interposed between a surface of the light emitting structure on which the second electrode structure is formed and a surface of the substrate on which the first and second electrode patterns are formed; removing the substrate for growth of semiconductor from the light emitting structure; removing portions of the light emitting structure and the insulator to expose at least portions of the first and second electrode patterns; and forming first and second connection portions electrically connecting the first and second electrode structures to the first and second electrode patterns, respectively.