METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device includes generating a mask layout of patterns in which the distance between adjacent ones of the patterns is equal to or less than a resolution of a lithography process, the patterns are apportioned among a plurality of masks such that in each of the masks the space between adjacent ones of the patterns is greater than the resolution, and a dual pattern is added to one of the masks. A semiconductor pattern is formed on a substrate using the mask(s) and the mask to which the dual pattern has been added. Patterns having a pitch equal to or less than the resolution may be formed on the semiconductor device.

主权项

1. A method of manufacturing a semiconductor device, comprising:
using a computer program to generate an original layout of patterns wherein adjacent ones of the patterns are spaced from each other by a distance equal to or less than a resolution of a lithography process; fabricating a plurality of lithography masks, including by: apportioning the patterns of the original layout among the lithography masks in such a way that the lithography masks have mask patterns derived from the original layout, and in each of the lithography masks adjacent ones of said mask patterns are spaced by a distance greater than the resolution, and incorporating a dual pattern into one of the lithography masks, the dual pattern corresponding to at least part of one of said mask patterns of another of the lithography masks; and forming a semiconductor pattern on a substrate using all of the lithography masks including that having the dual pattern.