| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
A semiconductor device includes a semiconductor substrate, an insulating film formed above the semiconductor substrate, and a multilayered wiring formed in a prescribed area within the insulating film. The multilayered wiring includes a dual damascene wiring positioned on at least one layer of the multilayered wiring. The dual damascene wiring includes an alloy having copper as a principal component. A concentration of at least one metallic element contained as an added component of the alloy in a via connected to the dual damascene wiring is 10% or more higher in a via connected to a wiring whose width exceeds by five or more times a diameter of the via than that in another via connected to another wiring of a smallest width in a same upper wiring layer of the multilayered wiring. |
| 申请公布号 |
US2015102492(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201414551505 |
申请日期 |
2014.11.24 |
| 申请人 |
Renesas Electronics Corporation |
发明人 |
Amano Mari;Tada Munehiro;Furutake Naoya;Hayashi Yoshihiro |
| 分类号 |
H01L23/522;H01L23/528;H01L23/532 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate; an insulating film formed above the semiconductor substrate; and a multilayered wiring formed in a prescribed area within the insulating film; wherein the multilayered wiring comprises a dual damascene wiring positioned on at least one layer of said multilayered wiring, wherein the dual damascene wiring comprises an alloy including copper as a principal component, and wherein a concentration of at least one metallic element contained as an added component of the alloy in a via connected to the dual damascene wiring is 10% or more higher in a via connected to a wiring whose width exceeds by five or more times a diameter of the via than that in another via connected to another wiring of a smallest width in a same upper wiring layer of said multilayered wiring. |
| 地址 |
Kawasaki-shi JP |
