| 发明名称 |
Semiconductor Device Including A Contact Plug With Barrier Materials |
| 摘要 |
Disclosed herein is a semiconductor device that comprises a plug including an upper portion, a lower portion and a side surface and comprising tungsten, a barrier metal comprising tungsten nitride and covering the side surface and the lower portion of the contact plug, a conductive layer, and a barrier layer comprising titanium and intervening between the barrier metal and the first conductive layer. |
| 申请公布号 |
US2015102491(A1) |
申请公布日期 |
2015.04.16 |
| 申请号 |
US201414497716 |
申请日期 |
2014.09.26 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Miyazaki Tatsuya |
| 分类号 |
H01L29/45;H01L23/48 |
主分类号 |
H01L29/45 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a contact plug including an upper portion, a lower portion and a side surface interfacing the upper and lower portions with each other, the contact plug comprising tungsten; a barrier metal comprising tungsten nitride and covering the side surface and the lower portion of the contact plug; a first conductive layer; and a barrier layer comprising titanium and intervening between the barrier metal and the first conductive layer. |
| 地址 |
Boise ID US |
