发明名称 ELECTROSTATIC DISCHARGE PROTECTION DEVICE
摘要 An electrostatic discharge (ESD) protection device includes a substrate including a plurality of active fins and a plurality of grooves. The ESD protection device includes an insulation layer on the active fins and the grooves, and a gate electrode on the active fins. The ESD protection device includes a first impurity region adjacent to a first side of the gate electrode, and a second impurity region adjacent to a second side of the gate electrode. The second side of the gate electrode may be arranged opposite to the first side. The ESD protection device includes an electrode pattern of a capacitor overlapping the first impurity region, a resistor overlapping the second impurity region, and a connection structure electrically connecting the electrode pattern, the gate electrode, and the resistor to each other.
申请公布号 US2015102394(A1) 申请公布日期 2015.04.16
申请号 US201414509365 申请日期 2014.10.08
申请人 Samsung Electronics Co., Ltd. 发明人 YOO Jae-Hyun;KIM Jin-Tae;JEON Jong-Sung
分类号 H01L27/02;H01L27/06 主分类号 H01L27/02
代理机构 代理人
主权项 1. An electrostatic discharge (ESD) protection device, comprising: a substrate including a plurality of active fins and a plurality of grooves, each of the active fins and each of the grooves extending in a first direction; an insulation layer on the active fins and the grooves; a gate electrode on the active fins, the gate electrode extending in a second direction substantially perpendicular to the first direction; a first impurity region adjacent to a first side of the gate electrode, the first impurity region being spaced apart from the gate electrode in the first direction; a second impurity region adjacent to a second side of the gate electrode, the second impurity region being spaced apart from the gate electrode in the first direction, and the second side of the gate electrode being arranged opposite to the first side in the first direction; an electrode pattern of a capacitor overlapping the first impurity region; a resistor overlapping the second impurity region; and a connection structure electrically connecting the electrode pattern, the gate electrode, and the resistor to each other.
地址 Suwon-Si KR