SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

A silicon carbide semiconductor device has a first-conductivity-type semiconductor layer having a lower impurity concentration and formed on a first-conductivity-type semiconductor substrate, a second-conductivity-type semiconductor layer having a higher impurity concentration and selectively formed in the first-conductivity-type semiconductor layer, a second-conductivity-type base layer having a lower impurity concentration formed on a surface of the second-conductivity-type semiconductor layer, a first-conductivity-type source region selectively formed in a surface layer of the base layer, a first-conductivity-type well region formed to penetrate the base layer from a surface to the first-conductivity-type semiconductor layer, and a gate electrode formed via a gate insulation film on a surface of the base layer interposed between the source region and the well region. Portions of the respective second-conductivity-type semiconductor layers of different cells can be connected to each other by a connecting portion in a region under the well region.

主权项

1. A silicon carbide semiconductor device having a semiconductor device structure created inside a semiconductor substrate, the silicon carbide semiconductor device comprising:
an electrode for establishing electric contact with the semiconductor device structure; and an electrode pad for establishing electric contact with the electrode from the outside, wherein the silicon carbide semiconductor device has the semiconductor device structure also formed in the semiconductor substrate of a lower portion of the electrode pad, the semiconductor device structure includes:
a first-conductivity-type semiconductor substrate,
a first-conductivity-type semiconductor layer having a lower impurity concentration and formed on the semiconductor substrate,a second-conductivity-type semiconductor layer having a higher impurity concentration and selectively formed in the first-conductivity-type semiconductor layer,a second-conductivity-type base layer having a lower impurity concentration and formed on a surface of the second-conductivity-type semiconductor layer,a first-conductivity-type source region selectively formed in a surface layer of the base layer,a first-conductivity-type well region formed to penetrate the base layer from a surface to the first-conductivity-type semiconductor layer, anda control electrode formed via a gate insulation film on a surface of the base layer interposed between the source region and the well region, and portions of the respective second-conductivity-type semiconductor layers of different cells are connected to each other in a region under the well region.