横向双扩散金氧半导体装置及其制造方法;LATERAL DOUBLE DIFFUSED METAL-OXIDE-SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

一种横向双扩散金氧半导体装置包括：磊晶半导体层，位于一半导体基板上；闸介电层，位于该磊晶半导体层上；闸堆叠物，位于该闸介电层上；第一掺杂区，位于该闸堆叠物之第一侧之该磊晶半导体层内；第二掺杂区，位于该闸堆叠物之第二侧之该磊晶半导体层内；第三掺杂区，位于该第一掺杂区内；第四掺杂区，位于该第二掺杂区内；绝缘层，覆盖该第三掺杂区、该闸介电层与该闸堆叠物；导电接触物，位于绝缘层、该第三掺杂区、该第一掺杂区与该磊晶半导体层之内；以及第五掺杂区，位于该导电接触物下方之该磊晶半导体层之内。; a gate dielectirc layer disposed over the epitaxial semiconductor layer; a gate stack disposed over the gate dielectric layer; a first doped region disposed in the epitaxial semiconductor layer from a first side of the gate stack; a second doped region disposed in the epitaxial semiconductor layer from a second side of the gate stack; a third doped region disposed in the first doping region; a fourth doped region disposed in the second doped region; an insulating layer covering third doped region, the gate dielectric layer, and the gate stack; a conductive contact disposed in the insulating layer, the third doped region, the first doped region and the epitaxial semiconductor layer; and a fifth doped region disposed in the epitaxial semiconductor layer under the conductive contact.