| 摘要 |
<p>A transfer method for a semiconductor device includes: a step (i) of forming a semiconductor device layer on a first substrate having an anisotropic etch property; a step (ii) of forming multiple semiconductor devices by patterning the semiconductor device layer; a step (iii) of forming a photosensitive material to touch the semiconductor devices and the first substrate; a step (iv) of pattering a bonding material to expose part of the first substrate; a step (v) of removing at least part of a region which touches the semiconductor devices in the first substrate, by anisotropic-etching the exposed first substrate; and a step (vi) of transferring at least one among semiconductor devices which touch the patterned bonding material to a second substrate made of a different material from the first substrate.</p> |
