| 摘要 |
Provided are a light emitting diode having a magnetic structure and a method of manufacturing the same. A magnetic structure consisting of a passivation layer and a magnetic layer is formed on the inside of the light emitting structure consisting of an active layer and a semiconductor layer. According to the present invention, a magnetic structure including a magnetic layer is arranged on the side of the active layer. Thereby, the effect of the magnetic field applied to the active layer is increased and the light emitting recombination rate of charge carriers is increased. Therefore, the efficiency of a light emitting diode can be improved. Also, the arrangement of the magnetic structure including a magnetic layer can be changed according to an etch shape of the light emitting structure. Thereby, magnetic fields having various distributions can be secured. |
