发明名称 METHOD FOR HETEROJUNCTION INTERFACE PASSIVATION
摘要 <p>A method is disclosed for fabricating a heterojunction photovoltaic cell, comprising - providing a crystalline silicon substrate, - providing a thin passivation layer on a first main surface of said substrate; - performing a plasma treatment, comprising treating the thin passivation layer with a plasma, the plasma comprising hydrogen; - providing a second layer on the thin passivation layer, the second layer comprising amorphous silicon.</p>
申请公布号 EP2656401(B1) 申请公布日期 2015.04.15
申请号 EP20110817219 申请日期 2011.12.21
申请人 IMEC 发明人 KUMAR, ARUL;BEARDA, TWAN;GOUGAM, ADEL
分类号 H01L31/18 主分类号 H01L31/18
代理机构 代理人
主权项
地址