| 摘要 |
<p>According to an embodiment, a semiconductor device comprises: a first semiconductor layer including Al_xIn_yGa_(1-x-y)N (0<=x<=1, 0<=y<=1, 0<=x+y<=1); a second semiconductor layer including Al_xIn_yGa_(1-x-y)N (0<=x<=1, 0<=y<=1, 0<=x+y<=1) arranged on the first semiconductor layer; an insulation layer arranged on the semiconductor layer and having an inclined plane on one side; and a first and a second terminal respectively arranged on both sides of the insulation layer on the second semiconductor layer. The first terminal comprises: a first segment in schottky-contact with the second semiconductor layer; a second segment enlarged from the first segment and arranged on the inclined plane of the insulation layer; and a third segment enlarged from the second segment and arranged on the insulation layer. The second terminal is in ohmic-contact with the second semiconductor layer.</p> |
