| 摘要 |
<p>The present invention relates to a semiconductor lamination structure and a method of forming the same. The semiconductor thin film structure reduces stress applied to a nitride semiconductor layer when a nitride semiconductor layer is grown, reduces dislocation to form a high quality nitride semiconductor layer and also can be easily separable from a substrate. A semiconductor lamination structure according to the present invention includes: a single crystal substrate which is different from nitride semiconductor; an inorganic thin film which is formed on a substrate to define multiple cavities which are separated from each other in the substrate and is crystallized with the same crystal structure as the substrate; and a nitride semiconductor layer which is grown from the inorganic thin film crystallized on the cavities and forms voids in a region between the cavities.</p> |
