| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an inverted avalanche photodiode which can operate at higher speed without limiting the bandwidth thereof. <P>SOLUTION: A light-receiving element comprises: an n-type contact layer 106 formed in a smaller area in a plan view than a mesa structure in a lower layer; a p-electrode 109 formed on a rear face of a substrate 101 on the outside of a formation region of the n-type contact layer 106 and connected to a p-type contact layer 102 so as to penetrate the substrate 101; through wiring 108 for connecting the p-electrode 109 and the p-type contact layer 102, which is formed in a range 121 outside the formation region of the n-type contact layer 106 and inside the formation region of the mesa structure; and an n-electrode 107 formed on an entire area of the n-type contact layer 106. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
