发明名称 Millimeter-wave broadband transition of microstrip line on thin to thick substrates
摘要 <p>Embodiments are directed to a structure comprising: a first substrate section having a first thickness, a second substrate section having a second thickness different from the first thickness, a plurality of vias configured to couple a first ground plane associated with the first substrate section and a second ground plane associated with the second substrate section, and a microstrip comprising: a first section associated with the first substrate section and having a first width, a second section associated with the second substrate section and having a second width different from the first width, and a taper between the first width and the second width.</p>
申请公布号 EP2860821(A1) 申请公布日期 2015.04.15
申请号 EP20140187751 申请日期 2014.10.06
申请人 BLACKBERRY LIMITED 发明人 GHASSEMI, NASSER;KANJ, HOUSSAM;DEVRIES, CHRISTOPHER ANDREW;GU, HUANHUAN
分类号 H01Q1/48;H01P5/02;H01Q13/20 主分类号 H01Q1/48
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