| 摘要 |
The present invention improves a throughput of an inductively coupled plasma CVD apparatus. The plasma CVD apparatus includes: a chamber; a holding transfer unit inside the chamber holding a substrate to be processed and relatively transferring the substrate along a transfer path; at least one inductively coupled antenna installed inside the chamber opposite to the transfer path and having the number of turns less than one circuit; a high frequency power supply unit supplying high frequency power to at least one inductively coupled antenna; and a gas introduction unit introducing a predetermined gas into the chamber. Moreover, the plasma CVD apparatus supplies the high frequency power from the high frequency power supply unit to at least one inductively coupled antenna to generate plasma when the predetermined gas is introduced into the chamber from the gas introduction unit and transfers the substrate along the transfer path by the holding transfer unit. |
