| 摘要 |
PROBLEM TO BE SOLVED: To provide a drive circuit for an insulated gate device which implements prevention of a wrong turn-on of the device and a high speed turn-off thereof while reducing effects on a normal operation (current consumption and Ron).SOLUTION: A gate voltage controlling MOSFET 14 is disposed between a gate and a source of a power MOSFET 8 to lower a gate voltage of the power MOSFET 8, and a pull-up element 25 is disposed between a gate and a drain of the MOSFET 14. The MOSFET 14 is configured to be driven on the supply, to the gate via the pull-up element 25, of a charging current Ir of a parasitic capacitance Cgd between the gate and a drain of the power MOSFET 8 generated when a drain voltage Vd of the power MOSFET 8 is suddenly raised. The MOSFET 14 can be driven to an on state only when a voltage value of a gate signal is lower than a predetermined reference voltage higher than its threshold voltage. |
