| 摘要 |
<p>A nonvolatile semiconductor storage device includes an identification code generating circuit, a simultaneous write bit count calculation circuit, a write range calculation circuit, and a program pulse generating circuit. The identification code generating circuit generates an identification code to be assigned to every one of bits to be written, and the simultaneous write bit count calculation circuit calculates the number of bits to be written simultaneously, the number being equalized based on the generated identification code, within a range that does not exceed a maximum simultaneously writable bit number. The write range calculation circuit calculates a write range, based on the calculated number of bits to be written simultaneously, and the program pulse generating circuit generates a program pulse based on write data and on the generated identification code and the calculated write range.</p> |
