| 摘要 |
Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at% of Ga, 0.1 to 5 at% of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050 °C or higher to produce an ingot. Alternatively, the method includes a step of producing a starting material powder that is obtained by pulverizing at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements and a step of subjecting the starting material powder to hot processing in a vacuum, in an inert atmosphere or in a reducing atmosphere. |
