发明名称 プラズマ処理装置
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus equipped with an adhesion-preventing shield which is capable of plasma ignition without installing separate plasma ignition means, which inhibits a high-frequency antenna from capacitively coupling with plasma, and which suppresses the deterioration of RF power transmission efficiency to a discharge space caused when a dielectric wall is covered with a conductive etching product. <P>SOLUTION: The plasma processing apparatus includes: at least double adhesion-preventing shields arranged inside the dielectric wall of a plasma generating chamber. The adhesion-preventing shields includes a dielectric-made adhesion-preventing shield which is provided on a vacuum side close to the dielectric wall of a vacuum vessel and formed so as to cover the dielectric wall, and a metallic adhesion-preventing shield which acts as a shield electrode to be provided inside the adhesion-preventing shield and has a slit shape in order to prevent the RF power transmission from being lowered by cutting connection of films formed by the etching product. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5701050(B2) 申请公布日期 2015.04.15
申请号 JP20100288341 申请日期 2010.12.24
申请人 发明人
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
代理机构 代理人
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