| 摘要 |
The present invention relates to an etching composition; a method for manufacturing an patterned insulation film using the same method; a patterned insulation film; and a semiconductor device including the same insulation film. According to an embodiment of the present invention, the etching composition can form a planer etched side. As a result, the insulation film, etched by the etching composition, can form a high-quality metal film or the like, which can be introduced to post-processes. Moreover, the etching composition can etch a silicon oxide film and a silicon nitride film at the same time. Therefore, the etching composition can efficiently provide the patterned insulation film. The etching composition includes 0.5-5.5 parts by weight of hydrogen fluoride, 5-40 parts by weight of ammonium fluoride, 0.1-4.5 parts by weight of organic acid, and 50-95 parts by weight of a solvent. |
