| 摘要 |
<p>The aim of the present invention is to provide a method of processing wafers whose insides can be processed even when insulated reinforcement sheets are applied. In accordance with this invention, the wafer′s surface is marked with a grid-like multiple lines to be cut along the lines and there are devices formed in each grid. The wafer is then cut into individual pieces along the lines. The invention is divided into six distinct processes: the first is the process to attach protective layers on the wafer′s surface; the second is the inner wall grinding process that grinds the inside of the wafer to a certain thickness; the third is the modification layer formation process that forms a modification layer along the wafer′s cutting lines by irradiating along the lines after aligning the light converging point of the laser onto the lines so that the laser is radiolucent to the wafer′s inside; the fourth is the wafer supporting process that support the outer area of the dicing tape with a circular frame by putting on the dicing tape on the side of the insulated reinforcement sheets mounted on the inside of the wafer; and the partition process that divides the wafer into a number of individual devices and the reinforcement sheets along the device lines by putting on external force.</p> |
