| 摘要 |
A semiconductor device includes a semiconductor substrate in which an active region and an edge termination region are defined, a semiconductor element formed in the active region, and first to fourth P layers formed in a region spanning from an edge portion of the active region to the edge termination region in the surface of the semiconductor substrate. The first to fourth P layers respectively have surface concentrations P(1) to P(4) that decrease in this order, bottom-end distances D(1) to D(4) that increase in this order, and distances B(1) to B(4) to the edge of the semiconductor substrate that increase in this order. The surface concentration P(4) is 10 to 1000 times the impurity concentration of the semiconductor substrate, and the bottom-end distance D(4) is in the range of 15 to 30 μm. |
