| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To integrate a semiconductor device having n-channel type transistors to p-channel type transistors, to improve performance of the semiconductor device, and to reduce cost of the semiconductor device having a large area, in a creating method of the semiconductor device. <P>SOLUTION: The creating method of the semiconductor device includes a process wherein accelerated ions are radiated onto its single-crystal silicon substrate having a plane within±15°from a ä211} plane as its surface, and thereby, a brittle region is formed in its single-crystal silicon substrate. Also, the creating method includes a process wherein the single-crystal silicon substrate and a base substrate are bonded to each other via an insulating layer, a process wherein the single-crystal silicon substrate is separated in the brittle region, and a single-crystal silicon layer having the plane within±15°from the ä211} plane as its surface is formed on the base substrate and a process wherein by using the single-crystal silicon layer, the n-channel type and p-channel type transistors having their channel length directions within±15°from a <111> axis are formed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
