| 摘要 |
<p>A magnetic sensor device comprises a first magnet (6) and a second magnet (7) that are disposed on mutually opposing sides of a conveyance path (2), and one of poles of the first magnet (6) faces an opposite pole of the second magnet (7). The first magnet (6) and the second magnet (7) generate a cross magnetic field whose strength in a spacing direction, which is orthogonal to a conveying direction, is within a predetermined range. An AMR element (10) is located in a magnetic field in which the strength of the cross magnetic field in the spacing direction is within a predetermined range, and detects, as a change in a resistance value, a change in the cross magnetic field caused by an object (5) to be detected. A multilayer board (9) outputs the change in the resistance value detected by the AMR element (10) to a processing circuit (15).</p> |
