| 摘要 |
PROBLEM TO BE SOLVED: To enhance reliability of a nonvolatile resistance change element at a low resistance.SOLUTION: A semiconductor device comprises: at least two logic circuits 15 and 16; and a resistance-change type nonvolatile element 14 capable of electrically connecting between a logic circuit 15 in the preceding stage and a logic circuit 16 in the following stage. The resistance-change type nonvolatile element has a resistance value that is electrically rewritable, and has a transition characteristic of a bipolar type in which the direction of applied voltage or current required for transition of the resistance value from a high-resistance state to a low resistance state and the direction of applied voltage or current required for the transition from a row-resistance state to a high resistance state are opposite to each other. The logic circuit in the preceding stage is configured so as to have a driving capability that causes a peak value of a signal current, which is output from the logic circuit in the preceding stage and flows through the resistance change type nonvolatile element, to be increased in the direction in which the resistance change type nonvolatile element transitions to a low-resistance state and to be decreased in the opposite direction. |
