发明名称 ショットキーダイオードスイッチおよびそれを含むメモリユニット
摘要 <p>A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.</p>
申请公布号 JP5702381(B2) 申请公布日期 2015.04.15
申请号 JP20120520683 申请日期 2010.07.09
申请人 发明人
分类号 H01L29/47;H01L21/8246;H01L27/105;H01L27/28;H01L29/82;H01L29/872;H01L43/08;H01L45/00;H01L49/00;H01L49/02;H01L51/05 主分类号 H01L29/47
代理机构 代理人
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