发明名称 High efficiency charge pump circuit
摘要 The present document relates to charge pump voltage doublers for use in integrated circuits. A charge pump circuit (100, 300) configured to generate an output voltage Vout at an output of the circuit (100, 300) from an input voltage Vin at an input of the circuit (100, 300) is described. A level of the output voltage Vout is greater than a level of the input voltage Vin. The charge pump circuit (100, 300) comprises a first P-type switch (101) comprising an input node and an output node (110). The input node of the first P-type switch (101) is coupled to the input of the circuit (100, 300). The circuit (100, 300) further comprises a boosting capacitor (106) coupled at a first side to the output node (110) of the first P-type switch (101) and coupled at a second side to a capacitor control signal (120). In addition, the circuit (100, 300) comprises a second P-type switch (102) comprising an input node (110) and an output node. The input node (110) of the second P-type switch (102) is coupled to the output node (110) of the first P-type switch (101), and the output node of the second P-type switch (102) is coupled to the output of the circuit (100, 300). Furthermore, the circuit (100, 300) comprises control circuitry (103, 104, 105, 107) configured to provide a capacitor control signal (120) which alternates between a low level and a high level, and configured to generate first and second control signals based on the capacitor control signal (120) for alternating the first and second P-type switches (101, 102) between on-states and off-states, respectively, such that electrical energy is transferred from the input to the output of the circuit (100, 300) using the boosting capacitor (106).
申请公布号 EP2860865(A1) 申请公布日期 2015.04.15
申请号 EP20130188374 申请日期 2013.10.11
申请人 DIALOG SEMICONDUCTOR GMBH 发明人 AVCI, CELAL;OZANOGLU, KEMAL;EROZ, SERHAN;TOPCU, EMRE
分类号 H02M3/07 主分类号 H02M3/07
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