Electrostatic discharge protection circuits using carbon nanotube field effect transistor (CNTFET) devices and methods of making same

摘要

Device structures and methods for providing carbon nanotube field effect transistor (CNTFET) devices with enhanced current carrying capability at lower densities are disclosed. Apparatuses and methods using CNTFET devices for providing protection from electrostatic discharge (ESD) voltages are also disclosed. According to some aspects of the present disclosure the electrostatic discharge protection circuits are configured with CNTFET diodes and provide protection from electrostatic discharge induced voltages for a protected circuit without affecting the normal operation of the protected circuit. According to some aspects of the present disclosure the methods for providing protection from electrostatic discharge voltages create conducting paths for providing protection from electrostatic discharge induced voltages for a protected circuit without affecting the normal operation of the protected circuit.

主权项

1. An electrostatic discharge (ESD) protection circuit for protecting a protected circuit from an electrostatic discharge induced voltage, said electrostatic discharge protection circuit comprising:
a CNTFET (carbon nanotube field effect transistor) diode having at least two terminals, wherein said CNTFET diode is electrically connected to said protected circuit by a first node and said CNTFET diode is electrically connected to a second node; wherein said CNTFET diode creates a conducting path in response to said electrostatic discharge induced voltage exceeding a desired voltage, thereby limiting said electrostatic discharge induced voltage and protecting said protected circuit from said electrostatic discharge induced voltage; and wherein said CNTFET diode terminates said conducting path in response to a decrease in said electrostatic discharge induced voltage.