发明名称 Method, apparatus and system for reducing pixel cell noise
摘要 Circuitry to reduce signal noise characteristics in an image sensor. In an embodiment, a bit trace line segment is located between neighboring respective segments of a source follower power trace and an additional trace which is to remain at a first voltage level during a pixel cell readout time period. In another embodiment, for each such trace segment, a smallest separation between the trace segment and the respective neighboring other one of such trace segments is substantially equal to or less than some maximum length to provide for parasitic capacitance between the bit line trace and one or more other traces.
申请公布号 US9007504(B2) 申请公布日期 2015.04.14
申请号 US201213441697 申请日期 2012.04.06
申请人 OmniVision Technologies, Inc. 发明人 Manabe Sohei;Lyu Jeong-Ho
分类号 H04N5/335;H01L27/146 主分类号 H04N5/335
代理机构 Blakely Sokoloff Taylor & Zafman LLP 代理人 Blakely Sokoloff Taylor & Zafman LLP
主权项 1. An image sensor device comprising: a pixel array including a pixel cell comprising a source follower transistor; a first trace comprising a first segment to remain at a first voltage level throughout a time period; a bit line trace coupled to the pixel cell, the bit line trace comprising a second segment which neighbors, and extends parallel to, the first segment, the bit line trace to receive an analog signal output from the pixel cell during the time period, the analog signal based on an amplification signal, wherein the pixel cell further comprises a select transistor, wherein the source follower transistor is coupled to the bit line trace via the select transistor; anda source follower power trace coupled to the pixel cell, the source follower power trace comprising a third segment which neighbors, and extends parallel to, the second segment, wherein the image sensor device comprises a metal layer which includes the first segment, the second segment and the third segment, the source follower power trace to provide a second voltage level to the source follower transistor, wherein the source follower transistor to provide the amplification signal based on the second voltage level.
地址 Santa Clara CA US