| 发明名称 |
Semiconductor device and method for fabricating the same |
| 摘要 |
A semiconductor device and a method for fabricating the same are disclosed, which can prevent migration of copper (Cu) ion when forming a Through Silicon Via (TSV). The semiconductor device includes a through silicon via (TSV) formed to pass through a semiconductor substrate; an oxide film located at a lower sidewall of the TSV; and a first prevention film formed to cover an upper portion of the TSV, an upper sidewall of the TSV, and an upper surface of the oxide film. |
| 申请公布号 |
US9006866(B2) |
申请公布日期 |
2015.04.14 |
| 申请号 |
US201213722757 |
申请日期 |
2012.12.20 |
| 申请人 |
SK Hynix Inc. |
发明人 |
Lee Dong Ryeol |
| 分类号 |
H01L29/40;H01L23/538;H01L21/48;H01L23/522;H01L21/768;H01L23/48 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a through silicon via (TSV) configured to pass through a semiconductor substrate; an oxide film located over a lower sidewall of the TSV; a first prevention film formed to cover an upper surface of the TSV, an upper sidewall of the TSV, and an upper surface of the oxide film; and a second prevention film formed between the oxide film and a sidewall of the TSV including the upper sidewall of the TSV and the lower sidewall of TSV. |
| 地址 |
Icheon KR |
