| 发明名称 | Resistance-switching memory cells adapted for use at low voltage | ||
| 摘要 | A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided. | ||
| 申请公布号 | US9006795(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201414180818 | 申请日期 | 2014.02.14 |
| 申请人 | SanDisk 3D LLC | 发明人 | Yang Xiaoyu;Scheuerlein Roy E.;Li Feng;Meeks Albert T. |
| 分类号 | H01L23/52;H01L45/00;G11C17/16;H01L27/10;G11C17/00;H01L23/525 | 主分类号 | H01L23/52 |
| 代理机构 | Vierra Magen Marcus LLP | 代理人 | Vierra Magen Marcus LLP |
| 主权项 | 1. A memory cell comprising: a diode; and a resistance-switching material layer comprising Hf or Zr coupled in series with the diode, wherein the resistance-switching material layer has a thickness between 20 and 65 angstroms. | ||
| 地址 | Milpitas CA US | ||