发明名称 |
Manganese oxide thin film and oxide laminate |
摘要 |
The present invention provides a thin film or laminate which ensures switching capabilities by phase transition of Mott transition at room temperature. An embodiment of the present invention provides a manganese oxide thin film 2 formed on a plane of a substrate 1 and having a composition represented by a composition formula RMnO3 (where R is at least one trivalent rare earth element selected from lanthanoids), wherein an atomic layer containing an element R and not containing Mn and an atomic layer containing Mn and not containing the element R are alternately stacked along a direction perpendicular to the plane of the substrate, and the manganese oxide thin film has two nonequivalent crystal axes along an in-plane direction of the plane of the substrate. An aspect of the present invention also provides an oxide laminate having the manganese oxide thin film 2 of the above aspect to which strongly-correlated oxide thin film 3, 31 or 32 are formed contiguously. |
申请公布号 |
US9006737(B2) |
申请公布日期 |
2015.04.14 |
申请号 |
US201214365409 |
申请日期 |
2012.12.07 |
申请人 |
Fuji Electric Co., Ltd. |
发明人 |
Ogimoto Yasushi |
分类号 |
H01L49/02;H01L49/00;C30B29/22;C30B29/68;C01G45/12;C30B23/02;H01L21/02;C30B29/16;C23C14/08;C23C14/28 |
主分类号 |
H01L49/02 |
代理机构 |
Rabin & Berdo, P.C. |
代理人 |
Rabin & Berdo, P.C. |
主权项 |
1. A manganese oxide thin film formed on a plane of a substrate, comprising:
a substrate of plane orientation (210); and a manganese oxide thin film formed on a plane of the substrate and having a composition represented by composition formula RMnO3, where R is at least one trivalent rare earth element selected from lanthanoids, wherein an atomic layer containing an element R and not containing Mn, and an atomic layer containing Mn and not containing the element R are alternately stacked along a stacking direction perpendicular to the plane of the substrate, the manganese oxide thin film has two nonequivalent crystal axes along an in-plane direction of the plane of the substrate and has a polar surface containing an electric field, and cations R and Mn are translocated relative to O to generate polarization so as to lean toward the stacking direction. |
地址 |
Kawasaki-Shi JP |