| 发明名称 | Silicon wafer and method for producing it | ||
| 摘要 | Silicon wafers having an oxygen concentration of 5·1017 to 7.5·1017 cm−3 have the following BMD densities after the following thermal processes, carried out alternatively: a BMD density of at most 1·108 cm−3 after a treatment for three hours at 780° C. and subsequently for 16 hours at 1000° C., anda BMD density of at least 1·109 cm−3 after heating of the silicon wafer at a heating rate of 1 K/min from a start temperature of 500° C. to a target temperature of 1000° C. and subsequent holding at 1000° C. for 16 hours. The wafers are prepared by a method of irradiation of a heated wafer with flashlamp which delivers energy which is from 50 to 100% of the energy density necessary for melting the wafer surface. | ||
| 申请公布号 | US9005563(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201113191534 | 申请日期 | 2011.07.27 |
| 申请人 | Siltronic AG | 发明人 | von Ammon Wilfried;Kissinger Gudrun;Kot Dawid |
| 分类号 | C01B33/02;F24J3/00;C30B33/02;C30B29/06;H01L21/322 | 主分类号 | C01B33/02 |
| 代理机构 | Brooks Kushman P.C. | 代理人 | Brooks Kushman P.C. |
| 主权项 | 1. A silicon wafer having an oxygen concentration of 5·1017 to 7.5·1017 cm−3, and having a BMD density, wherein the BMD density is at most 1·108 cm−3, measured after treating the silicon wafer for three hours at 780° C. and subsequently for 16 hours at 1000° C., and the BMD density at least 1·109 cm−3, measured after treating the silicon wafer at a heating rate of 1 K/min from a start temperature of 500° C. to a target temperature of 1000° C. and at 1000° C. for 16 hours. | ||
| 地址 | Munich DE | ||