| 发明名称 | Methods for forming semiconductor fins with reduced widths | ||
| 摘要 | A method includes forming Shallow Trench Isolation (STI) regions extending from a top surface of a semiconductor substrate into the semiconductor substrate, and after the forming the STI regions, oxidizing an upper portion of a semiconductor strip between the STI regions. A width of the upper portion of the semiconductor strip is reduced by the oxidizing. The STI regions are recessed, until a portion of the upper portion of the semiconductor strip is higher than a top surface of remaining portions of the STI regions to form a semiconductor fin. | ||
| 申请公布号 | US9006079(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201213656025 | 申请日期 | 2012.10.19 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Ching Kuo-Cheng;Ju Shi Ning |
| 分类号 | H01L21/8234;H01L21/762;H01L29/66;H01L29/78 | 主分类号 | H01L21/8234 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method comprising: forming Shallow Trench Isolation (STI) regions extending from a top surface of a semiconductor substrate into the semiconductor substrate; after the forming the STI regions, oxidizing an upper portion of a semiconductor strip between the STI regions, wherein a width of the upper portion of the semiconductor strip is reduced by the oxidizing, and wherein at a time the oxidizing the upper portion of the semiconductor strip is performed, top surfaces of the STI regions are higher than a top surface of the semiconductor strip; and recessing the STI regions, until a portion of the upper portion of the semiconductor strip is higher than a top surface of remaining portions of the STI regions to form a semiconductor fin. | ||
| 地址 | Hsin-Chu TW | ||