| 发明名称 | Nonvolatile memory device and method of programming nonvolatile memory device | ||
| 摘要 | A memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes first memory blocks configured to store m-bit data per cell and second memory blocks configured to store n-bit data per cell. The memory controller is configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the second memory blocks when a program operation is performed on the second memory block. | ||
| 申请公布号 | US9007827(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201314062932 | 申请日期 | 2013.10.25 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Jung Young Woo;Shin Hee Tak;Jung Jinwoo;Jo Sung Woo |
| 分类号 | G11C11/34;G11C16/10 | 主分类号 | G11C11/34 |
| 代理机构 | Volentine & Whitt, PLLC | 代理人 | Volentine & Whitt, PLLC |
| 主权项 | 1. A memory system, comprising: a nonvolatile memory device including a plurality of first memory blocks configured to store m-bit data per cell and a plurality of second memory blocks configured to store n-bit data per cell (n being a positive integer greater than m); and a memory controller configured to control the nonvolatile memory device to close an open word line generated in a second memory block of the plurality of second memory blocks when a program operation is performed on the second memory block. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||