| 发明名称 | Semiconductor device with through silicon via and alignment mark | ||
| 摘要 | A semiconductor device with a semiconductor substrate having a first surface and an opposite-facing second surface, a through electrode electrically connected to the semiconductor element and penetrating the semiconductor substrate from the first surface to the second surface, and a conductor, not electrically connected to the semiconductor element, penetrating the semiconductor substrate from the first surface to the second surface, where the through electrode and the conductor have different shapes in plan view. | ||
| 申请公布号 | US9006905(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201414196560 | 申请日期 | 2014.03.04 |
| 申请人 | PS4 Luxco S.A.R.L. | 发明人 | Nakamura Nobuyuki |
| 分类号 | H01L23/48;H01L21/683;H01L21/768;H01L23/544;H01L25/065;H01L25/00;H01L21/56;H01L23/31;H01L23/00 | 主分类号 | H01L23/48 |
| 代理机构 | Young & Thompson | 代理人 | Young & Thompson |
| 主权项 | 1. A semiconductor device, comprising: a semiconductor substrate having a first surface and a second surface located opposite to each other in a thickness direction; a semiconductor element formed on the first surface of the semiconductor substrate; a through electrode penetrating the semiconductor substrate from the first surface to the second surface and electrically connected to the semiconductor element, the through electrode having a first shape in plan view; and a conductor penetrating the semiconductor substrate from the first surface to the second surface and not electrically connected to the semiconductor element, the conductor having a second shape in plan view, wherein the first shape is different from the second shape. | ||
| 地址 | Luxembourg LU | ||