| 发明名称 | Pre-patterned hard mask for ultrafast lithographic imaging | ||
| 摘要 | A method of fabricating a substrate including coating a first resist onto a hardmask, exposing regions of the first resist to electromagnetic radiation at a dose of 10.0 mJ/cm2 or greater and removing a portion of said the and forming guiding features. The method also includes etching the hardmask to form isolating features in the hardmask, applying a second resist within the isolating features forming regions of the second resist in the hardmask, and exposing regions of the second resist to electromagnetic radiation having a dose of less than 10.0 mJ/cm2 and forming elements. | ||
| 申请公布号 | US9005875(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201313834059 | 申请日期 | 2013.03.15 |
| 申请人 | Intel Corporation | 发明人 | Bristol Robert L.;Nyhus Paul A.;Wallace Charles H. |
| 分类号 | G03F7/20;G03F7/26;G03F7/00 | 主分类号 | G03F7/20 |
| 代理机构 | Grossman, Tucker, Perreault & Pfleger, PLLC | 代理人 | Grossman, Tucker, Perreault & Pfleger, PLLC |
| 主权项 | 1. A method of fabricating a substrate comprising: coating a first resist onto a hardmask; exposing regions of said first resist to electromagnetic radiation at a dose of 10.0 mJ/cm2 or greater; removing a portion of said resist and forming guiding features; etching said hardmask forming isolating features in said hardmask; applying a second resist within said isolating features forming regions of said second resist in said hardmask; and exposing regions of said second resist to electromagnetic radiation having a dose of less than 10.0 mJ/cm2 and forming elements. | ||
| 地址 | Santa Clara CA US | ||