Resist stripping compositions and methods for manufacturing electrical devices

摘要

A liquid composition comprising (A) at least one polar organic solvent, selected from the group consisting of solvents exhibiting in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B), the weight percentage being based on the complete weight of the respective test solution (AB), a constant removal rate at 50° C. for a 30 nm thick polymeric barrier anti-reflective layer containing deep UV absorbing chromophoric groups, (B) at least one quaternary ammonium hydroxide, and (C) at least one aromatic amine containing at least one primary amino group, a method for its preparation and a method for manufacturing electrical devices, employing the liquid composition as a resist stripping composition and its use for removing negative-tone and positive-tone photoresists and post etch residues in the manufacture of 3D Stacked Integrated Circuits and 3D Wafer Level Packagings by way of patterning Through Silicon Vias and/or by plating and bumping.

主权项

1. A liquid resist stripping composition, comprising:
(A) from 40 to 99.95% by weight of a polar organic solvent, which is at least one selected from the group consisting of diethylenetriamine, N-methyl imidazole, 3-amino-1-propanol, 5-amino-1-pentanol, and dimethyl sulfoxide; (B) from 0.05 to 10% by weight of a quaternary ammonium hydroxide; and (C) from 0.05 to 15% by weight of an aromatic amine comprising a primary amino group, wherein: the polar organic solvent (A) exhibits a constant removal rate at 50° C. of a 30 nm thick polymeric barrier anti-reflective layer comprising a deep UV absorbing chromophoric group, in the presence of from 0.06 to 4% by weight of dissolved tetramethylammonium hydroxide (B) based on a total weight of a test solution (AB) comprising the polar organic solvent (A) and the tetramethylammonium hydroxide (B); the composition does not comprise hydrogen peroxide; and the composition comprises less than 2% by weight of water.