发明名称 |
Dual-stage trapped-flux magnet cryostat for measurements at high magnetic fields |
摘要 |
A method and a dual-stage trapped-flux magnet cryostat apparatus are provided for implementing enhanced measurements at high magnetic fields. The dual-stage trapped-flux magnet cryostat system includes a trapped-flux magnet (TFM). A sample, for example, a single crystal, is adjustably positioned proximate to the surface of the TFM, using a translation stage such that the distance between the sample and the surface is selectively adjusted. A cryostat is provided with a first separate thermal stage provided for cooling the TFM and with a second separate thermal stage provided for cooling sample. |
申请公布号 |
US9007058(B2) |
申请公布日期 |
2015.04.14 |
申请号 |
US201213405436 |
申请日期 |
2012.02.27 |
申请人 |
UChicago Argonne, LLC |
发明人 |
Islam Zahirul;Das Ritesh K.;Weinstein Roy |
分类号 |
G01R33/00 |
主分类号 |
G01R33/00 |
代理机构 |
|
代理人 |
Pennington Joan |
主权项 |
1. A method for implementing measurements at high magnetic fields using dual-stage trapped-flux magnet (TFM) cryostat apparatus comprising:
providing a trapped-flux magnet (TFM); positioning a sample proximate to a surface of said TFM, selectively adjusting a distance between said sample and said TFM surface for selectively changing a magnetic field at said sample; providing a single cryostat; cooling said TFM using a first separate thermal stage coupled to said single cryostat; and cooling said sample using a second separate thermal stage coupled to said single cryostat; said single cryostat providing independent temperature control of said TFM and said sample. |
地址 |
Chicago IL US |