发明名称 Dual-stage trapped-flux magnet cryostat for measurements at high magnetic fields
摘要 A method and a dual-stage trapped-flux magnet cryostat apparatus are provided for implementing enhanced measurements at high magnetic fields. The dual-stage trapped-flux magnet cryostat system includes a trapped-flux magnet (TFM). A sample, for example, a single crystal, is adjustably positioned proximate to the surface of the TFM, using a translation stage such that the distance between the sample and the surface is selectively adjusted. A cryostat is provided with a first separate thermal stage provided for cooling the TFM and with a second separate thermal stage provided for cooling sample.
申请公布号 US9007058(B2) 申请公布日期 2015.04.14
申请号 US201213405436 申请日期 2012.02.27
申请人 UChicago Argonne, LLC 发明人 Islam Zahirul;Das Ritesh K.;Weinstein Roy
分类号 G01R33/00 主分类号 G01R33/00
代理机构 代理人 Pennington Joan
主权项 1. A method for implementing measurements at high magnetic fields using dual-stage trapped-flux magnet (TFM) cryostat apparatus comprising: providing a trapped-flux magnet (TFM); positioning a sample proximate to a surface of said TFM, selectively adjusting a distance between said sample and said TFM surface for selectively changing a magnetic field at said sample; providing a single cryostat; cooling said TFM using a first separate thermal stage coupled to said single cryostat; and cooling said sample using a second separate thermal stage coupled to said single cryostat; said single cryostat providing independent temperature control of said TFM and said sample.
地址 Chicago IL US