Semiconductor memory device and method of fabricating the same

摘要

Provided is a semiconductor device and method of fabricating the semiconductor memory device. The semiconductor device may be formed by forming a first welding groove along outside edges of one case of a pair of upper and lower cases, forming a first welding protrusion along outside edges of the other case, the first welding protrusion being formed to correspond to the first welding groove and having a volume larger than a volume of the first welding groove. The method may further include inserting the first welding protrusion into the first welding groove to enclose a memory module in an inner accommodating space of the upper and lower cases, melting the first welding protrusion so that a first portion of the first welding protrusion fills the first welding groove and a second portion of the first welding protrusion fills a space between welding portions of the upper case and the lower case, and solidifying the first and second portions of the first welding protrusion.

主权项

1. A case for holding a memory device comprising:
a first cover including a first upper portion, a first lower portion and an inner wall separating the first upper portion and the first lower portion, the first lower portion including a plurality of ribs on an inner surface of the first cover; and a second cover including a second upper portion and a second lower portion, wherein the first upper portion and the second upper portion are configured to hold the memory device in an inner accommodating room formed by coupling the first cover and the second cover, each of the first upper portion and the second upper portion includes a first recessed portion at a first side edge, a contour of the first recessed portion of the first upper portion having a mirror image to that of the first recessed portion of the second upper portion such that the first recessed portion of the first upper portion and the first recessed portion of the second upper portion are coupled to each other, the first recessed portion of the first upper portion being not extended to the first lower portion, the first recessed portion of the second upper portion being not extended to the second lower portion, the first cover includes a plurality of openings in the first upper portion, the plurality of openings including a first opening, a second opening and a third opening, sizes of the first to third openings being different to one another in a width direction, the second and the third openings aligned in a row, while the first opening being off-axis from a center of the row in an arrangement direction, the case is configured to accommodate only one memory device, a bottom edge of the first cover at the first lower portion has a substantially straight-line shape and runs substantially parallel with the first inner wall, and the plurality of ribs include a plurality of first-type ribs, the plurality of first-type ribs being perpendicular to the inner wall of the first cover, the plurality of first-type ribs being arranged such that a first distance between an outermost one of the plurality of first-type ribs and an adjacent side edge of the first cover is shorter than a second distance between two neighboring ones of the plurality of first-type ribs.