| 发明名称 | Tuning strain in semiconductor devices | ||
| 摘要 | A Fin Field-Effect Transistor (FinFET) includes a semiconductor layer over a substrate, wherein the semiconductor layer forms a channel of the FinFET. A first silicon germanium oxide layer is over the substrate, wherein the first silicon germanium oxide layer has a first germanium percentage. A second silicon germanium oxide layer is over the first silicon germanium oxide layer. The second silicon germanium oxide layer has a second germanium percentage greater than the first germanium percentage. A gate dielectric is on sidewalls and a top surface of the semiconductor layer. A gate electrode is over the gate dielectric. | ||
| 申请公布号 | US9006842(B2) | 申请公布日期 | 2015.04.14 |
| 申请号 | US201313906146 | 申请日期 | 2013.05.30 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Colinge Jean-Pierre;Ching Kuo-Cheng;Chang Gwan Sin;Wu Zhiqiang;Wang Chih-Hao;Diaz Carlos H. |
| 分类号 | H01L27/088;H01L29/78;H01L29/66 | 主分类号 | H01L27/088 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A device comprising: a substrate; and a Fin Field-Effect Transistor (FinFET) comprising: a semiconductor layer over the substrate, wherein the semiconductor layer forms a channel of the FinFET;a first silicon germanium oxide layer over the substrate, wherein the first silicon germanium oxide layer has a first germanium percentage;a second silicon germanium oxide layer over the first silicon germanium oxide layer, wherein the second silicon germanium oxide layer has a second germanium percentage greater than the first germanium percentage;a gate dielectric on sidewalls and a top surface of the semiconductor layer; anda gate electrode over the gate dielectric. | ||
| 地址 | Hsin-Chu TW | ||