High-voltage MEMS apparatus and method

摘要

A high-voltage MEMS system compatible with low-voltage semiconductor process technology is disclosed. The system comprises a MEMS device coupled to a high-voltage bias generator employing an extended-voltage isolation residing in a semiconductor technology substrate. The system avoids the use of high-voltage transistors so that special high-voltage processing steps are not required of the semiconductor technology, thereby reducing process cost and complexity. MEMS testing capability is addressed with a self-test circuit allowing modulation of the bias voltage and current so that a need for external high-voltage connections and associated electro-static discharge protection circuitry are also avoided.

主权项

1. A MEMS system comprising:
a MEMS device comprising a high-voltage port; and a CMOS device comprising: a semiconductor technology substrate, an extended-voltage isolation region, and a high-voltage bias generator,wherein, the extended-voltage isolation region comprises a native region separating an N-type well region from a P-type well region, thereby extending a breakdown voltage between the N-type and P-type well regions,
wherein, the high-voltage bias generator is coupled to the extended-voltage isolation region, the extended-voltage isolation region resides in the semiconductor substrate such that one of the N-type and P-type well regions is in contact with the semiconductor substrate, and the high-voltage bias generator is further coupled to the high-voltage port.