发明名称 Optoelectronic device and the manufacturing method thereof
摘要 An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.
申请公布号 US9006774(B2) 申请公布日期 2015.04.14
申请号 US201313932661 申请日期 2013.07.01
申请人 Epistar Corporation 发明人 Chen Shih-I;Hsu Chia-Liang;Hsu Tzu-Chieh;Huang Chien-Fu;Lin Ching-Pei
分类号 H01L33/00;H01L33/46;H01L33/40;H01L33/22;H01L33/42;H01L33/44;H01L33/38 主分类号 H01L33/00
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. An optoelectronic device, comprising: a semiconductor stack; a contact layer having a first pattern on the semiconductor stack for ohmically contacting the semiconductor stack; an insulating layer having a second pattern on the semiconductor stack; a reflecting layer conformably covering the contact layer and the insulating layer; and a transparent conductive layer between the insulating layer and the reflecting layer for connecting the insulating layer and the reflecting layer.
地址 Hsinchu TW