发明名称 |
Optoelectronic device and the manufacturing method thereof |
摘要 |
An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. |
申请公布号 |
US9006774(B2) |
申请公布日期 |
2015.04.14 |
申请号 |
US201313932661 |
申请日期 |
2013.07.01 |
申请人 |
Epistar Corporation |
发明人 |
Chen Shih-I;Hsu Chia-Liang;Hsu Tzu-Chieh;Huang Chien-Fu;Lin Ching-Pei |
分类号 |
H01L33/00;H01L33/46;H01L33/40;H01L33/22;H01L33/42;H01L33/44;H01L33/38 |
主分类号 |
H01L33/00 |
代理机构 |
Muncy, Geissler, Olds & Lowe, P.C. |
代理人 |
Muncy, Geissler, Olds & Lowe, P.C. |
主权项 |
1. An optoelectronic device, comprising:
a semiconductor stack; a contact layer having a first pattern on the semiconductor stack for ohmically contacting the semiconductor stack; an insulating layer having a second pattern on the semiconductor stack; a reflecting layer conformably covering the contact layer and the insulating layer; and a transparent conductive layer between the insulating layer and the reflecting layer for connecting the insulating layer and the reflecting layer. |
地址 |
Hsinchu TW |